current-carrier injection

См. также в других словарях:

• Hot carrier injection — is the phenomenon in solid state devices or semiconductors where either an electron or a hole gains sufficient kinetic energy to overcome a potential barrier, becoming a hot carrier , and then migrates to a different area of the device. The term… …   Wikipedia

• Current injection technique — The current injection technique is a technique developed to reduce the turn OFF switching transient of power bipolar semiconductor devices. It was developed and published by Dr S. Eio of Staffordshire University (United Kingdom) in 2007.… …   Wikipedia

• Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP …   Wikipedia

• Contact resistance — The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the… …   Wikipedia

• History of the transistor — Invention of the transistor= The first patent [patent|US|1745175|Julius Edgar Lilienfeld: Method and apparatus for controlling electric current first filed in Canada on 22.10.1925, describing a device similar to a MESFET] for the field effect… …   Wikipedia

• Laser diode rate equations — The laser diode rate equations model the electrical and optical performance of a laser diode. This system of ordinary differential equations relates the number or density of photons and charge carriers (electrons) in the device to the injection… …   Wikipedia

• Gain-switching — is a technique in optics by which a laser can be made to produce pulses of light of extremely short duration, of the order of picoseconds (10 12s).In a semiconductor laser, the optical pulses are generated by injecting a large number of carriers… …   Wikipedia

• Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… …   Wikipedia

• Negative bias temperature instability — (NBTI) is a key reliability issue in MOSFETs. It is of immediate concern in p channel MOS devices, since they almost always operate with negative gate to source voltage; however, the very same mechanism affects also nMOS transistors when biased… …   Wikipedia

• IGCT — The Integrated Gate Commutated Thyristor (IGCT) is a new high power semiconductor device. An IGCT is a sub family of the GTO thyristor and like the GTO thyristor is a fully controllable power switch. Device DescriptionAn IGCT is a special type of …   Wikipedia

• John Bardeen — Infobox Scientist name = John Bardeen imagesize = 110px caption = John Bardeen birth date = birth date|1908|5|23|df=y birth place = Madison, Wisconsin, USA death date = death date and age|1991|1|30|1908|5|23 death place = Boston, Massachusetts… …   Wikipedia